首页> 外文会议>International Conference on Infrared, Millimeter, and Terahertz Waves >Real-time CMOS terahertz camera employing plane-to-plane imaging with a focal-plane array of field-effect transistors
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Real-time CMOS terahertz camera employing plane-to-plane imaging with a focal-plane array of field-effect transistors

机译:实时CMOS太赫兹相机,采用平面到平面成像和场效应晶体管的焦平面阵列

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We present a terahertz camera working at 590 GHz at real-time frame-rates of 16 frames per second (fps). An array of 12×12 field-effect transistors has been fabricated in a 150-nm CMOS process and is used as the camera's image sensor. The averaged single-pixel noise-equivalent-power is 43 pW/√Hz, the voltage single-pixel responsivity is 340 V/W. For an effective power of 104 µW distributed over the sensor area and a single-pixel integration time of 2.5 ms, a dynamic range of more than 10 dB for full-frame images at 33 Hz update rate is observed. The array, which does not yet contain integrated preamplifiers, serves as a test-bed for the development of heterodyne imaging also to be described in the presentation.
机译:我们提出了一个590 GHz的太赫兹摄像机,其实时帧速率为每秒16帧(fps)。以150 nm CMOS工艺制造了12×12场效应晶体管的阵列,并将其用作相机的图像传感器。平均单像素噪声等效功率为43 pW /√Hz,电压单像素响应度为340 V / W。对于在传感器区域上分布的104 µW有效功率和2.5 ms的单像素积分时间,对于33 Hz更新速率的全帧图像,动态范围大于10 dB。该阵列尚不包含集成的前置放大器,可作为开发外差成像的试验台,该外差成像也将在演示文稿中进行描述。

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