Fundamental Oscillation up to 915GHz in InGaAs/AlAs Resonant Tunneling Diodes Integrated with Slot Antennas

摘要

A fundamental oscillation up to 915GHz was observed at room temperature in InGaAs/AlAs resonant tunneling diode integrated with planar slot antennas. By reducing the mesa area, parasitic capacitance of resonant tunneling diode was decreased. The output power was small (around a few tens nW) at present because of a small area (～0.63μm{sup}2) and a low available current density (～3mA/μm{sup}2) which is the difference in current density between the peak and valley. The dependence of fundamental oscillation frequency on mesa area is also shown.