Effects of hetero-related bulk traps on photoresponse for long-wavelength Hg{sub}(1-x)Cd{sub}xTe infrared photodiodes have been numerically studied. The model involves a generalized approach, taking into account absorption coefficient, trap-assisted and band-to-band tunneling recombination mechanism, and bulk traps distributions associated with misfit dislocations present in the GaAs-substrate/Hg{sub}(1-x)Cd{sub}xTe hetero-structure. The characteristic x-dependent material parameters, used in the simulations, such as donor concentration, trap density and level, and minority lifetime, are extracted by the simultaneous-mode nonlinear fitting procedure.
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