High-Resolution XRD Analysis and Device Characteristics of InAs/GaSb Strained-Layer Superlattice Photodetector

摘要

Type-II InAs/GaSb (8/8-ML) strained-layer superlattice (SLS) were grown, and analyzed by high-resolution X-ray diffraction (XRD). The satellite peaks of XRD show a strain transition from compressive to tensile. The responsivity of discrete SLS photodetectors (P=150) shows a cutoff wavelength of ～5μm, and the temperature dependence gives an activation energy of 275meV corresponding to the transition energy of HH1-CB.