High-speed, low-noise thermoelectric graphene detectors at terahertz frequencies

摘要

We report room temperature terahertz detection in hBN/graphene/hBN heterostructures, integrated in top-gated field effect transistors. The record combination of high-speed (response time < 1 ns) and high sensitivity (noise equivalent power ~ 100 pWHz-1I2) is enabled by the photo-thermoelectric effect and paves the way for the design of ultrafast graphene arrays in the far infrared, opening concrete perspectives for targeting ultrafast applications.