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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A low-noise CMOS instrumentation amplifier for thermoelectric infrared detectors
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A low-noise CMOS instrumentation amplifier for thermoelectric infrared detectors

机译:用于热电红外探测器的低噪声CMOS仪表放大器

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摘要

A low-noise CMOS instrumentation amplifier for low-frequency thermoelectric infrared sensor applications is described which uses a chopper technique to reduce low-frequency noise and offset. The offset reduction efficiency of the band-pass filter, implemented to reduce residual offset due to clock feedthrough, has been analyzed and experimentally verified. The circuit has been integrated in a transistor-only 1-/spl mu/m single-poly n-well CMOS process. It features a gain of 52 dB with a 500 Hz bandwidth and a common-mode rejection ratio (CMRR) of more than 70 dB. The equivalent input low frequency noise is 15 nV//spl radic/Hz. The typical residual input offset is 1.5 /spl mu/V. The amplifier power consumption is 1.3 mW.
机译:描述了一种用于低频热电红外传感器应用的低噪声CMOS仪表放大器,该放大器使用斩波器技术来降低低频噪声和失调。为了减少由于时钟馈通引起的残留偏移,已对带通滤波器的偏移降低效率进行了分析和实验验证。该电路已集成在仅晶体管的1- / splμ/ m单多晶硅n阱CMOS工艺中。它具有500 dB带宽的52 dB增益和超过70 dB的共模抑制比(CMRR)。等效输入低频噪声为15 nV // spl radic / Hz。典型的残余输入失调为1.5 / spl mu / V。放大器功耗为1.3 mW。

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