A Laterally Monolithic-Integrated Multi-Cascode for Applications with 600V and more based on 20V-FINFETs in 90nm Technology

摘要

Over decades the usage of the charge compensation principle for power devices has improved the performance and efficiency of typical applications in almost all voltage classes like power supplies, converters and drives. Different types of charge compensation concepts were applied to various device structures like the superjunction compensation, the field plate compensation and the dynamic compensation in form of bipolar electron-hole plasma. For each voltage class, unique technologies have been developed to adjust and optimize drift zone length, doping concentrations and avalanche robustness, leading to a large variety of different vertical and lateral power device technologies. In this paper, laterally monolithic-integrated multi-transistor cascodes are presented as high-voltage MOSFET transistors for a large range of breakdown voltages from 20V to multiple hundred volts.