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BCD8sP: An advanced 0.16 #x03BC;m technology platform with state of the art power devices

机译:BCD8SP:具有最先进的0.16μm技术平台,具有最先进的电力设备

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Advanced 0.16 μm BCD technology platform offering dense logic transistors (1.8 V-5 V CMOS) and high performance analog features has been developed. Thanks to dedicated field plate optimization, body and drain engineering, state of the art power devices (8 V to 42 V rated) have been obtained ensuring large Safe Operating Areas with best RONXAREA-BVDSS tradeoff.
机译:高级0.16μmBCD技术平台提供了密集的逻辑晶体管(1.8 V-5 V CMOS)和高性能模拟功能。由于专用的现场板优化,机身和排水工程,已经获得了最佳ronxarea-bvdss权衡的大型安全操作区域(8 v至42 v额定值)的最佳状态。

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