Generation of low-aberration beams of electrons based on nanosized Si-sponge field emission cathodes

摘要

The electron field emission from Si-sponge nanostructures prepared by galvanic anodization of a Si wafer at low current density has been investigated. The reproducible resonant peaks have been revealed at the field emission induction and their origin was attributed with the Lorentzian dependence transmission functions. The sizes of the Si-quantum well and the SiO2 barrier have been estimated by simulating of the energy distribution spectra of FE electrons within the resonance transitions and are 1.5–2.8 nm and 2 nm, respectively.