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Effects of Defects and Local Thickness Modulation on Spin-Polarization in Photocathodes based on GaAs/GaAsP Strained Superlattices

机译:基于GaAs / GaAsP应变超晶格的光电阴极旋转缺陷和局部厚度调节对光电阴极旋转的影响

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摘要

The spin polarization of electrons from the GaAs/GaAsP superlattice on GaAs is higher than that from the same superlattice on GaP. TEM observation revealed that in the superlattice on GaAs stacking faults were the main defects but in the superlattice on GaP local thickness modulation of superlattice layers was prominent. Stacking faults and thickness modulation have different effects on the spin-polarization.
机译:来自GaAs上的GaAs / GaASP超晶格的电子的自旋极化高于来自相同超晶格的间隙。 TEM观察显示,在GaAs堆叠故障上的超晶格是主要缺陷,但在超晶格中,超晶格层的间隙局部厚度调制突出。堆叠故障和厚度调制对自旋极化具有不同的影响。

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