Aluminum nitride (AlN) has attracted significant interest because of their unique physical properties such as negative electron affinity, high thermal conductivity, high melting point, good chemical stability, and low dielectric loss, which make it a promising field emission material for planar display devices and microelectronics field application [1.2]. In order to promote the field emission of AlN, the AlN cone arrays were desired to be fabricated because they have a large field enhancement factor so that the electrons can tunnel into vacuum more easily. So far many works have been concentrated on AlN nanocone arrays and its field emission properties [3-6]. However, the field shielding effect often happens in the field emission processing of cone arrays, which would make against the enhancement of field emission. Besides, the field emission from the cone arrays can not reflect a nature field emission property of a single cone. Therefore, to study a field emission of a single cone is significant to understand the field emission process of the whole cone arrays. In addition, an individual nanocone has also some important applications for an electron source and atom force microscopy (AFM) probe and scanning tunneling microscopy (STM) probe.
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