Gated-Field Emission Arrays with Single Carbon Nanotubes Grown on Mo Tips

摘要

In this work, we focus our attention on fabrications and characterizations of micro-gated-field emission arrays with CNTs grown on Mo tips (CNT FEAs). By further optimizing processing parameters, such as thickness of the sacrificial layer and height of Mo tips, the percentage of single CNTs increased to more than 50%. The I-V measurement of an array with 11000 cells at a gate voltage of 92 V showed an anode current of 1.2 mA, corresponding a current density of 0.57A/cm{sup}2, with a gate current 3.3% of the anode current.