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FIELD EMISSION FROM LOW BARRIER SURFACE CATHODES

机译:低阻挡表面阴极的场发射

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In most cases, analyses of experimental field emission I-V characteristics (FE current vs voltage variation) for extracting information about the cold cathode emission behavior and the work function Φ of the emitting surface, use the conventional analytic Fowler-Nordheim (FN) relation [1] I = 1.54×10{sup}(-6)×[(β{sup}2V{sup}2 A)/(Φ t{sup}2(y))]×exp {-6.83×10{sup}7 [(Φ{sup}(3/2) v(y))/(βV)]} where I is the FE current in A, Φ is the cathode work function in eV, V is the applied FE voltage in V, A is the FE surface area in cm{sup}2, β is a geometrical factor in cm{sup}(-1) determined by the geometry of the electron emitter and other electrodes and gives the applied local field F = βV. v(y) and t(y) are the Nordheim functions of the Nordheim parameter y = 3.7947×10{sup}(-4) F{sup}(1/2)/Φ, which take into account the lowering of the potential barrier due to the image potential, also called the Schottky effect. It's one property is the simplicity related to an analytical relation and the possibility to state, with high probability, on a tunnelling mechanism for the emission when its ln(I/V{sup}2) vs 1/V plot is a straight line. However, many new experimental measurements have stimulated another look on the relevance of the FN approach for low values of Φ [2,3] for which electron emission no longer takes place solely by tunnelling, through the triangular barrier, but occurs partly or dominantly by direct emission over the top of the barrier that has been pulled down below the Fermi level by the Schottky effect.
机译:在大多数情况下,分析实验场发射IV特性(Fe电流VS电压变化),用于提取有关发射表面的冷阴极发射行为和功函数φ的信息,使用传统的分析Fowler-Nordheim(FN)关系[1 ] i = 1.54×10 {sup}( - 6)×[(β{sup} 2v {sup} 2 a)/(φt{sup} 2(y))]×exp {-6.83×10 {sup} 7 [(φ{sup}(3/2)v(y))/(βv)]其中,在a中的Fe电流中,φ是EV中的阴极功函数,V是v的施加的Fe电压, a是Cm {sup} 2的Fe表面区域,β是由电子发射器和其他电极的几何形状确定的cm {sup}(-1)的几何因子,并给出所施加的局部场f =βv。 v(y)和t(y)是nordheim参数y = 3.7947×10 {sup}( - 4)f {sup}(1/2)/φ的nordheim函数,这考虑了潜在的降低由于图像电位,屏障也称为肖特基效应。它是一个属性是与分析关系的简单性,以及在其LN(I / V {SUP} 2)VS 1 / V绘图是直线的发射时,在发射的隧道机制上具有高概率的简单性。然而,许多新的实验测量刺激了另一种观察FN方法对于φ[2,3]的低值的相关性,其中通过三角形屏障不再通过隧穿,而是部分地或主要发生的电子发射通过肖特基效应将屏障顶部的直接发射被拉下来的费米水平。

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