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Smoother Shank Profile for Atom Probe Specimens Prepared by the Multi-step Focused Ion Beam Milling

机译:由多步聚焦离子束铣削制备原子探针样本的更平滑的柄轮廓

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The focused ion beam (FIB) has been successfully used to prepare a range of atom probe specimens from metal alloys at site specific locations such as grain boundaries, thin ribbons, powders, and multilayer film materials [1, 2]. A 3-step process is commonly employed in which annular milling patterns of decreasing inner and outer radii are used to shape the end of the specimen and produce an apex of the required end radius. However, this method generates ledges at the shank of the specimens[3, 4]. The ledges act as a stress concentration sites and specimens were frequently found to fracture at such regions. Smoother shank profile of the specimen is therefore desirable, so as to reduce the chance of specimen failure at such points. In this work, we present an improved method to fabricate the specimens from planar multilayer thin films. The films were deposited onto etched Si posts, with dimensions of ~4-5μm in diameter and ~100μm in length, prepared by the lithographic patterning of a Si wafer [3]. Capping layers, e.g. Cu, Ni, and Fe, were deposited on top to protect the films of interest from implantation damage caused by the high energy ion beams. Individual posts were attached to the tip of sharpened metal wires, and subsequently sharpened by ion milling in a FEI FIB 200 instrument without further Pt deposition required.
机译:聚焦离子束(FIB)已成功地用于制备来自位点特定位置的金属合金的一系列原子探针试样,例如晶界,薄带,粉末和多层薄膜材料[1,2]。通常采用3步骤,其中递减内和外半径的环形铣削图案用于塑造样品的末端并产生所需末端半径的顶点。然而,该方法在标本的柄部处生成横向[3,4]。凸缘充当应力浓度位点,并且经常发现标本在这些区域处裂缝。因此,所需的样品的更平滑的柄轮廓,以减少在此类点处的标本失败的可能性。在这项工作中,我们提出了一种制造从平面多层薄膜制造标本的改进方法。将薄膜沉积在蚀刻的Si柱上,直径〜4-5μm的尺寸和长度为100μm,由Si晶片的光刻图案化制备[3]。封盖层,例如Cu,Ni和Fe被沉积在顶部,以保护感兴趣的薄膜免受由高能离子束引起的植入损伤。单个柱子附着在锐化的金属线的尖端上,随后在FEI FIB 200仪器中通过离子铣削磨削而无需进一步的PT沉积。

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