The single field emitter is a potentially effective electron source for e-beam lithography, electron microscopes, sensors, indicators and other applications. We report here on fabrication and study of a single silicon tip field emitter with high aspect ratio. The fabrication process is based on deep wet anisotropic etching and step-by-step oxidation. Typical emitters are of 14,5μm height with the angle at the apex about 20° and the tip radius less than 20 nm. The cathode's base is about 6μm. The SEM image of a fabricated emitter is shown in Fig. 1.
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