2V 3 GHz low-noise bipolar wideband amplifier

摘要

A low-power RF wideband amplifier is presented. ft has a 24.3dB power gain, -3dB bandwidth of 3.2GHz, and consumes 23.7 mW power with a 2 V power supply. The circuit is implemented using Si bipolar process, NT25, which has f{sub}T of 25GHz. Bothinput and output impedances are matched at 50 ohms. This amplifier is suitable for applications that require wide bandwidth and high linearity in the range of 1 to 3 GHz.