IRON DOPING BEHAVIOUR IN INP GROWN BY LP-MOVPE IN THE PRESENCE OF TERTIARYBUTYLCHLORIDE

摘要

Aiming at selective regrowth, the effect of Tertiarybutylchloride (TBCl) on the electrical properties of LP-MOVPE grown Fe-doped InP layers was investigated in dependence of growth temperature and pressure, which varied from 635°C to 700°C and 20 mbar to 100 mbar, respectively. Fe-doping variation from 2·10{sup}16 cm{sup}(-3) to 1·10{sup}17 cm{sup}(-3) resulted in resistivity values in the 10{sup}8 Ωcm range. In the case of TBCl addition, enhanced Fe-incorporation was observed, however, resistivity remained in the same range. Thus, TBCl may be applied for morphology improvement without compromising the semi-insulating behaviour of the InP:Fe material.