Mesa-type InGaAs pin PDs with InP-Passivation Structure Monolithically Integrated with Resistors and Capacitors with Large Capacitance

摘要

We have successfully fabricated mesa-type InGaAs pin PDs with InP-passivation structure monolithically integrated with resistors and capacitors. As for the PD characteristics, the capacitance of 0.19pF and the dark current of 0.2nA at a reverse bias voltage of 5V are obtained. By using the MIM/MIS stacked structure in the capacitors, a large capacitance of 91pF is obtained on a chip area of 440μm{sup}2. Although the capacitor is very large, it shows a good reliability and the estimated life time is 60 years at a bias voltage of 10V and an ambient temperature of 125°C. The results promise the cost reduction and miniaturization of modules and systems for fiber optic communications.