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Bandwidth and SNR enhancement of MEMS microphones using two poly-Si micromachining processes

机译:使用两种多Si微机器工艺的MEMS麦克风的带宽和SNR增强

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This study employs the MOSBE process [1] to design and implement the MEMS microphone in Fig.1a to improve the signal-to-noise ratio (SNR) and the sensing range. The microphone has three merits: (1) rigid diaphragm without released holes together with ring-type oxide/polySi mesa could reduce the low frequency acoustic loss (Fig. lb); (2) rigid diaphragm supported by flexible V-shaped springs enables the parallel plate gap-closing capacitance sensing to improve sensing area and sensitivity (Fig.1b); (3) silicon nitride electrical isolation increases the sensing area to improve initial capacitance and noise floor (Fig.1c). Measurements indicate the fabricated microphone of 800μm diameter diaphragm: acoustic sensitivity is -39.8dB (Ref: 1V/1Pa) at 1kHz; +3dB bandwidth ranges 50-22kHz; and the SNR is over 54dB. Comparing with [2-3] in Table1, the presented microphone significantly improves the performances.
机译:本研究采用MOSBE过程[1]设计和实现图1A中的MEMS麦克风,以提高信噪比(SNR)和传感范围。麦克风有三个优点:(1)没有释放孔的刚性隔膜与环型氧化物/多硅MESA一起可以降低低频声损失(图1B); (2)柔性V形弹簧支撑的刚性隔膜使平行板间隙关闭电容感测,以改善传感区域和灵敏度(图1B); (3)氮化硅电隔离增加了传感区域,以改善初始电容和噪声底板(图1C)。测量表明,800μm直径膜片的制造麦克风:1kHz的声学灵敏度为-39.8dB(ref:1v / 1pa); + 3DB带宽范围为50-22KHz;并且SNR超过54dB。与表1中的[2-3]相比,所提出的麦克风显着提高了性能。

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