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Development of multi-axes CMOS-MEMS resonant magnetic sensor using Lorentz and electromagnetic forces

机译:利用洛伦兹和电磁力开发多轴CMOS-MEMS共振磁传感器

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The stacking of metal/tungsten layers as the in-plane magnetic-coil for CMOS-MEMS magnetic sensor has been proposed and demonstrated for the first time. Magnetic fields introduce forces through in-plane coils to drive suspended spring-mass structure. Capacitance sensing electrodes could detect the dynamic response of spring-mass structure to determine magnetic fields. Such design has the following advantages: (1) Number of turns for proposed in-plane magnetic-coil is not restricted by the space and thin film layers, (2) in-plane magnetic-coil could respectively generate Lorentz and electromagnetic forces by out-of-plane and in-plane magnetic fields for multi-axes magnetic field detection, and (3) easy integration with CMOS-MEMS accelerometers and sensing circuits [1]. The design was implemented using the standard TSMC 2P4M CMOS process. A 400μm×300μm proof-mass with embedded in-plane magnetic-coil of 35-turns/5μm-wide is demonstrated. Measurement indicates the 3-axis magnetic fields were successfully detected using two monolithically integrated perpendicular sensing units. At 1atm, the sensor has the resolution of 319.9nT/rtHz (x-axis magnetic field), 296.5nT/rtHz (y-axis), and 121.6nT/rtHz (z-axis).
机译:已经提出并首次证明了金属/钨层的堆叠作为用于CMOS-MEMS磁传感器的面内电磁线圈。磁场通过平面线圈引入力以驱动悬挂的弹簧质量结构。电容感应电极可以检测弹簧质量结构的动态响应以确定磁场。这种设计具有以下优点:(1)所建议的平面内电磁线圈的匝数不受空间和薄膜层的限制;(2)平面内电磁线圈可以分别产生洛伦兹力和电磁力。平面和平面磁场用于多轴磁场检测,以及(3)易于与CMOS-MEMS加速度计和传感电路集成[1]。该设计是使用标准的TSMC 2P4M CMOS工艺实现的。演示了一个400μm×300μm的质量证明,带有嵌入的35匝/5μm宽的平面内磁线圈。测量表明,使用两个整体集成的垂直感应单元已成功检测到3轴磁场。在1atm时,传感器的分辨率为319.9nT / rtHz(x轴磁场),296.5nT / rtHz(y轴)和121.6nT / rtHz(z轴)。

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