SIMULATIONS OF INDIUM ARSENIDE / GALLIUM ANTIMONIDE SUPERLATTICE BARRIER BASED THERMOPHOTOVOLTAIC CELLS

摘要

Thermophotovoltaic (TPV) cells are semiconductor devices which convert radiated heat directly intoelectricity. This work investigates extending the operational wavelength of such devices into the long-wavelengthinfrared regime. Specifically, this work explores the use a barrier layer inserted into a p-n junction to suppressrecombination pathways. Dark current simulations have been performed comparing a heterojunction barrier casewith a typical p-n junction. Doping levels were varied to adjust the size of the space charge region of the junctionand simulate the effect of different barrier widths within the depletion region.