Comparison of Noise Characteristics of GaAs and GaN Schottky Diodes for Millimeter and Submillimeter Applications

机译：GaAs和GaN肖特基二极管对毫米和亚倍仪应用的噪声特性比较

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A Monte Carlo (MC) analysis of the noise spectra of GaAs and GaN Schottky barrier diodes (SBDs) operating under static and time varying conditions is carry out in this paper. Especial attention is payed to the dependence of the noise spectra with the structure of the diode, temperature and working conditions. Published noise analytical models of SBDs are employed to verify the results obtained from MC simulations.

机译：在本文中进行了在静态和时间变化条件下操作的GaAs和GaN肖特基势垒二极管（SBD）噪声光谱的蒙特卡罗（MC）分析。特别注意噪声光谱与二极管的结构，温度和工作条件的依赖性。公布的SBD噪声分析模型用于验证从MC模拟获得的结果。

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《International Conference on Noise and Fluctuations》|2011年||共4页
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Diego Pardo; Susana Perez; Jesus Grajal; Javier Mateos; Tomas Gonzalez;
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中图分类 TB53-53;
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1. Noise characteristics of Ni/GaN Schottky barrier IMP ATT diode based on polar- and nonpolar-oriented wurtzite GaN for terahertz application [J] . Xiao-Yu Zhang, Lin-An Yang, Yao Ma, Superlattices and microstructures . 2020,第Mara期

机译：基于极性和非极性取向纤锌矿型GaN的Ni / GaN肖特基势垒IMP ATT二极管的噪声特性
2. A novel Schottky/2-DEG diode for millimeter- and submillimeter-wave multiplier applications [J] . Peatman W.C.B., Crowe T.W. IEEE Electron Device Letters . 1992,第1期

机译：适用于毫米波和亚毫米波倍增器应用的新型肖特基/ 2-DEG二极管
3. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications [J] . Shinohara K., Regan D.C., Tang Y., IEEE Transactions on Electron Devices . 2013,第10期

机译：用于亚毫米波MMIC应用的GaN HEMT和肖特基二极管的缩放
4. Comparison of noise characteristics of GaAs and GaN Schottky diodes for millimeter and submillimeter applications [C] . Pardo Diego, Perez Susana, Grajal Jesus, 2011 21st International Conference on Noise and Fluctuations . 2011

机译：毫米和亚毫米级应用的GaAs和GaN肖特基二极管的噪声特性比较
5. A novel Schottky/2-DEG diode for millimeter- and submillimeter-wave multiplier applications. [D] . Peatman, William Clinton Burling. 1992

机译：适用于毫米波和亚毫米波倍增器应用的新型肖特基/ 2-DEG二极管。
6. Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications [O] . Abdul Manaf Hashim, Farahiyah Mustafa, Shaharin Fadzli Abd Rahman, 2011

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7. Analysis of noise spectra in GaAs and GaN Schottky barrier diodes [O] . D Pardo, J Grajal, S Pérez, 2011

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8. A Schottky/2-DEG varactor diode for millimeter and submillimeter wave multiplier applications [R] . Peatman, W. C. B., Crowe, Thomas W., Shur, M., 1992

机译：用于毫米和亚毫米波倍增器应用的肖特基/ 2-DEG变容二极管

Comparison of Noise Characteristics of GaAs and GaN Schottky Diodes for Millimeter and Submillimeter Applications

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