Comparison of noise characteristics of GaAs and GaN Schottky diodes for millimeter and submillimeter applications

摘要

A Monte Carlo (MC) analysis of the noise spectra of GaAs and GaN Schottky barrier diodes (SBDs) operating under static and time varying conditions is carry out in this paper. Especial attention is payed to the dependence of the noise spectra with the structure of the diode, temperature and working conditions. Published noise analytical models of SBDs are employed to verify the results obtained from MC simulations.