High frequency noise performances of silicon and III-V field effect transistor

摘要

In this paper, the High Frequency (HF) Noise Performance of Silicon (Si) MOSFET are described in a first part through the DC biasing variations of key noise parameters related to physical noise sources or more circuit oriented such NFmin, the minimum noise figure. The second part highlights the fundamental difference between Si MOSFET and III-V HEMT lies in the correlation coefficient C between intrinsic current noise sources. The third part proposes an interesting optimization of MOSFET HF noise performance through channel engineering before conclusion.