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PI Timing Measurements in High Speed Flash Memory Embedded Systems

机译:PI时序测量在高速闪存嵌入式系统中

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This paper presents a case study on how to prevent the power distribution network's performance of a flash memories related to setup and hold times violations. We first review different high-speed factors [1], and point out how data timing can influence power distribution networks (PDNs) at frequencies in the range of megahertz. Experimental results show that even by applying usual PI recommendations could not solve the errors that appear on the supply voltage and in data waveforms, errors that could lead to incorrect values at the output of the NOR flash memory.
机译:本文提出了一种案例研究,如何防止配电网络的闪存与设置和禁止违反次数相关的闪存的性能。我们首先审查不同的高速因子[1],并指出数据定时如何影响MEGAHERZ范围内的频率的配电网络(PDNS)。实验结果表明,即使通过应用常用的PI建议,也无法解决电源电压和数据波形上出现的错误,可能导致NOR闪存输出处于错误值的错误。

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