Optimal Contact Placement in Partially Depleted SOI with Application to Raised Source-Drain Structures

摘要

We have studied the impact on drive current of bringing the S/D contacts closer to the gate edge. We found that there is an optimal location for contact placement beyond which Idsat decreases. The decrease in Idsat is due to two phenomena: ⅰ) current crowding and ⅱ) increase in contact resistance. We show that raised S/D structure will be able to circumvent these problems and allow for further improvement in drive current.