Electron-phonon interaction in Si nanowire devices: Low field mobility and self-consistent EM NEGF simulations

摘要

The paper presents a method for quantum transport simulations in nanowire (NW) MOSFETs with inelastic scattering processes incorporated. An atomistic tight-binding Hamiltonian with realistic electron-phonon interaction is transformed into an equivalent low-dimensional transport model which can be easily used in full-scaled NEGF simulations. The utility of the method is demonstrated by computing IV characteristics in n-Si NW devices.