High Withstand Voltage Pressure Sensors Based on Silicon Strain Gauges-on-a-Glass Substrate

摘要

This paper presents the design, fabrication, and prototype testing of a high pressure sensor which can provide, for the first time, high withstand voltage (>2 kV) at the chip level, not a packaging structure improvement, without scarifying its performance and cost. This is achieved by a special design of silicon strain gauge, based on bonding silicon to alkali-free glass wafers. The pressure sensors composed of silicon strain gauges on-glass chip not only meet the high withstand voltage requirements, but also show excellent output properties such as linearity, hysteresis, sensitivity and accuracy. In addition, silicon gauges-on-a-glass chip is easy to use due to the presence of a glass substrate.