首页> 外文会议>International Conference on Solid-State Sensors, Actuators and Microsystems >Ultra-Small Pixel IR Sensing Array Fabricated with a Post-CMOS Compatible Process
【24h】

Ultra-Small Pixel IR Sensing Array Fabricated with a Post-CMOS Compatible Process

机译:超小像素IR传感阵列,由CMOS兼容过程制造

获取原文

摘要

This paper reports an ultra-small pixel (100 µm × 100 µm) infrared (IR) thermopile sensing array with double-level suspended films structure fabricated by a front-side Post-CMOS compatible process. Benefit from the optimized heat dissipation control, the ultra-small thermopile pixel achieves the normalized detectivity of 2.1 × 107 cm·Hz1/2·W−1 and the responsivity of 52 V/W in air. Owing to the design of the double-level structure, the device obtains a high fill factor of 0.94. Test results show that the responsivity deviation of each pixel is less than ± 6.6 % and the response time is 1.4 ms. The designed thermopile array indicates a high potential for low-cost and high-resolution IR focal-plane array (IRFPA).
机译:本文报告了一种超小像素(100μm×100μm)红外(IR)热电堆传感阵列,具有由正面CMOS兼容过程制造的双层悬浮薄膜结构。从优化的散热控制中受益,超小型热电利像素实现了2.1×10的归一化探测器 7 CM·Hz. 1/2 ·W. -1 空气中52 v / w的响应度。由于双层结构的设计,该器件获得了0.94的高填充因子。测试结果表明,每个像素的响应偏差小于±6.6%,响应时间为1.4 ms。设计的热电堆阵列表示低成本和高分辨率IR焦平面阵列(IRFPA)的高电位。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号