Memelements - circuit elements with memory - serve novel applications in several technical disciplines. Due to similar functionalities to synapses, they are especially suitable for neuromorphic circuits. Physical and chemical phenomena in the nano-scale lead to the unique information storage characteristic of these elements. Fabrication of devices with memory considering a particular desired functionality is still difficult to achieve. Therefore, simulation models based on a consistent modeling approach are needed. A consistent model in this context should consider important energetic properties of the real device, e.g. passivity. We propose a novel circuit theoretic approach for a consistent modeling of lossless memcapacitive devices. They can be interpreted as nonlinear capacitances with memory. A comparison with existing modeling approaches of such elements underlines benefits as well as the necessity of a consistent model. The strategy introduced here is more general and independent of the underlying model. Beside simulations, it can also be utilized in emulations regarding real-time capable implementations.
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