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Energy-Efficient Terahertz Electronics Using Multi-Functional Electromagnetism and High-Parallelism Architecture

机译:使用多功能电磁和高平行架构的节能太赫兹电子产品

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This paper describes two approaches to increase the energy efficiency of on-chip terahertz (THz) integrated circuits and systems. First, we present designs of multi-functional electromagnetic structures that utilize mode orthogonality and near-field interference to achieve simultaneous oscillation, harmonic generation, signal filtering and radiation. This leads to ultra-compact THz circuits with low passive loss. Our radiator arrays using such approach achieve 0.1 mW and 3.3 mW of total radiated power at 1.01 THz and 0.32 THz, respectively, representing the highest radiated power in silicon in their frequency ranges. Next, we also present a highly-parallel architecture for broadband spectral scanning, which breaks the long-standing efficiency-bandwidth tradeoff. Our CMOS spectrometer and its associated dual-frequency-comb gas sensing scheme achieve rapid and seamless coverage of 220 to 320-GHz band with 5.2-mW total radiated power (TX) and a minimum of 14.6-dB noise figure (RX). These approaches, leveraging the high integration capability of silicon circuits, are proved to be highly effective towards energy-efficient THz microsystems for new paradigms of sensing and communications.
机译:本文介绍了提高片上太赫兹(THz)集成电路和系统能效的两种方法。首先,我们呈现多功能电磁结构的设计,该结构利用模式正交和近场干扰来实现同时振荡,谐波产生,信号滤波和辐射。这导致了具有低无源损耗的超紧凑的THz电路。我们使用这种方法的散热器阵列分别以1.01至THz和0.32至THz实现0.1 MW和3.3mW的总辐射功率,表示其频率范围内的硅中的最高辐射功率。接下来,我们还为宽带光谱扫描提供了一个高度平行的架构,可打破长期效率 - 带宽权衡。我们的CMOS光谱仪及其相关的双频率梳理气体传感方案实现了220至320GHz频段的快速和无缝覆盖,总辐射功率(TX)和最小14.6dB噪声系数(RX)。这些方法利用硅电路的高集成能力,被证明对可感知和通信的新范式的节能THZ微系统非常有效。

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