CMOS binary image sensor using gate/body-tied MOSFET-Type photodetector

摘要

This paper presents a complementary metal oxide semiconductor (CMOS) binary image sensor using gate/body-tied (GBT) MOSFET-Type photodetector. The GBT photodetector is composed of a floating gate which is tied to the body (n-well) of PMOSFET. The GBT photodetector has a high responsivity and it is possible to reduce the pixel size. Although the binary image sensor has a low degree of difference between dark and light, the binary image sensor using GBT photodetector has a high responsivity, high speed and low power.