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Temporary handling technology for advanced wafer level packaging applications based on adhesive bonding and laser assisted de-bonding

机译:基于粘合剂粘接和激光辅助去粘接的高级晶圆级包装应用临时处理技术

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This manuscript describes process scenarios for advanced wafer level packaging which are enabled by temporary bonding and de-bonding capabilities but exceeding the skills of classical thin wafer handling approaches. An adhesive bonding and laser assisted de-bonding technology which is a proven platform for TSV wafer processing is introduced to be a versatile basis for these different kinds of handling scenarios. By adapting this base technology, single devices can be temporary fixed at carrier wafers, subsequently processed in parallel and finally release from the carrier wafers. Furthermore, processes for thin IC wafers can be adapted to end up with singulated thin ICs equipped with temporary bonded carrier dice on their backside which act as mechanical support during a standard pick&place and reflow process scheme. Another process scenario allows the custom specific fabrication of cap structures at wafer level and subsequent transfer bonding from a donor wafer to a target wafer. A further scenario allows the fabrication of thin film multilayer structures at carrier wafers and their subsequent release from these carrier wafers. The manuscript firstly describes the general process flow for adhesive bonding and de-bonding by laser release technology. Secondly, technical back ground and motivation as well as technological solutions for the above mentioned process scenarios are presented and discussed in detail. Special focus is drawn on the corresponding temporary handling processes which are based on adhesive bonding and laser assisted de-bonding. All described processes are proven at 200 mm wafer scale.
机译:该稿件描述了通过临时粘接和去粘合能力实现的高级晶圆级包装的过程场景,但超出了经典薄晶片处理方法的技能。粘合剂粘合和激光辅助去粘接技术,其是TSV晶片加工的经过验证平台,为这些不同种类的处理场景是一种多功能的基础。通过调整该基础技术,单个装置可以临时固定在载体晶片上,随后并联处理,最后从载体晶片释放。此外,薄IC晶片的方法可以适于于其背面配备有临时粘合载体骰子的单个薄IC,其在标准拾取和回流工艺方案期间充当机械支撑。另一个过程场景允许在晶片水平处的帽结构的定制特定制造,并随后从供体晶片转移到靶晶片。进一步的情况允许在载体晶片上制造薄膜多层结构及其随后从这些载体晶片中释放。稿件首先描述了激光释放技术的粘合粘合和去粘合的一般过程流程。其次,介绍并详细讨论了技术背面和动机以及用于上述过程情景的技术解决方案。在基于粘合剂粘合和激光辅助去粘合的相应临时处理过程中绘制了特殊焦点。所有所描述的过程都以200mm晶片秤证明。

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