Fabrication and characterization of integrated photonics structures on GaN-Based photonic crystal membranes grown on silicon

摘要

The fabrication and characterization of free-standing hybrid GaN photonic structures operating at 1.55 μm or in the visible range will be discussed. The structures are self-supported by tethers and coupled to photonic crystal waveguides and cavities. The fabrication process is based on the growth of GaN on Si, e-beam lithography and dry etching. W1 PhC waveguides and L3 cavities are investigated. The cavities exhibit quality factors as high as ～ 5400. In the visible range, L7-type cavity with InGaN/GaN quantum wells exhibit modes with Q factors up to 5200 at ～ 420 nm at 10 K.