All Inkjet-Printed High On/Off Ratio Two-Dimensional Materials Field Effect Transistor

摘要

This paper introduces the development of a novel ink, design, fabrication, and characterization of all inkjet-printed two-dimensional (2D) materials-based field effect transistor with a high current on/off ratio. A stable and efficient method of inkjet printing is developed for nitrogen-doped graphene (N-graphene) nanosheets. Good area coverage of N-graphene percolation clusters is observed from the SEM image. The Raman spectrum reveals a high amount of disorder in the nanoflakes due to the nitrogen doping. A current on-off ratio of 336 is achieved for the transistor with a systematic combination of N-graphene and molybdenum disulfide (MoS₂) percolation network channel. An EDS spectrum confirms the heterostructure of N-graphene and MoS₂. To our best knowledge, this is the highest on/off ratio for a fully inkjet printed transistor based on 2D materials.