Multi-Functional Annealing Using Flexibly-Shaped-Pulse Flash Lamp Annealing (FSP-FLA) for High-k/Metal Gated CMOS Devices

摘要

As complimentary metal-oxide-semiconductor (CMOS) devices are scaled down, an ultra-shallow junction (USJ) with extremely shallow junction depth and low resistivity is required to operate the scaled CMOS devices with high performances. The formation of USJ by using milli-second annealing (MSA) is therefore indispensable for 32-nm-node CMOS devices and beyond. Recently, the impacts of MSA such as flash lamp annealing (FLA) or laser spike annealing on CMOS device performance have been reported [1-15].