Effect of last barrier on efficiency improvement of blue InGaN/GaN light-emitting diodes

摘要

Effect of last barrier (LB) with different thicknesses and p-doping concentrations on efficiency improvement of blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) is simulated by APSYS software. The simulation results show that thin LB has positive effect at low p-doping concentration while negative at high concentration and that p-doping is more effective for LEDs with thick LB to increase their efficiency.