High-density gate aperture arrays for Spindt cathode fabricated using nanosphere lithography

摘要

The prevailing techniques currently involved in the fabrication of gate aperture arrays for high-density Spindt cathodes are expensive, time consuming and low-throughput, which limits the potential usage of Spindt cathodes in the microwave electro-vacuum devices in future. In this work, we applied nanosphere lithography technique to fabricate periodic gate aperture arrays for high-density Spindt cathodes. It can be found that the technique is low-cost, high-efficiency to be used.