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Measuring techniques for deformation and stress analysis in micro-dimensions

机译:微观变形和应力分析的测量技术

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The paper reviews some of the currently used strain / stress measurement tools developed for rather local application - deformation and stress measurement by Digital Image Correlation (DIC) techniques, microRaman, and electron diffraction for stress measurement. The selected methods possess spatial measurement resolutions of 1 µm or better, which makes them ideal to meet typical demands for strain and stress analyses on objects with high gradients, like e.g. advanced MEMS, semiconductor devices, and components of 3D IC integration. DIC methods applied to stress measurement, which have been seized past years by different labs, are described in more detail. Examples of stress determination on TSVs by DIC and microRaman approaches illustrate the utilization of these methods to analyze stresses in electronics components of current interest. Finally, a brief comparison between the DIC, microRaman and electron diffraction techniques (EBSD) is given.
机译:本文回顾了一些为局部应用而开发的当前使用的应变/应力测量工具-通过数字图像相关(DIC)技术,微拉曼和电子衍射测量应力的变形和应力。所选的方法具有1 µm或更高的空间测量分辨率,这使其成为满足对高梯度物体(例如高应力物体)进行应变和应力分析的典型要求的理想选择。先进的MEMS,半导体器件以及3D IC集成的组件。更加详细地描述了由压力实验室在过去几年中掌握的应用于应力测量的DIC方法。通过DIC和microRaman方法确定TSV应力的示例说明了利用这些方法来分析当前关注的电子元件中的应力。最后,对DIC,显微拉曼光谱和电子衍射技术(EBSD)进行了简要比较。

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