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A preliminary study on system-level impact of persistent main memory

机译:持久主记忆系统级别影响的初步研究

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For almost 30 years, computer memory systems have been essentially the same: volatile, high speed memory technologies like SRAM and DRAM used for cache and main memory; magnetic disks for high-end data storage; and persistent, low speed flash memory for storage with low capacity/low energy consumption requirements such as embedded/mobile devices. Today we watch the emergence of new non-volatile memory (NVM) technologies that promise to radically change the landscape of memory systems. This work presents system-level latency and energy impacts of a computer architecture with persistent main memory using PCRAM and Memristor. Our experimental results support the feasibility of employing emerging non-volatile memory technologies as persistent main memory, indicating that performance penalties should be mild, and energy improvements should be significant, up to 45.5% less when using PCRAM and 72.4% less when using Memristor.
机译:近30年来,计算机内存系统基本相同:易失性,高速存储器技术,如SRAM和DRAM用于缓存和主存储器; 用于高端数据存储的磁盘; 和持久性,低速闪存,用于存储低容量/低能耗要求,如嵌入式/移动设备。 今天,我们观看了新的非易失性记忆(NVM)技术的出现,该技术承诺从根本上改变内存系统的景观。 使用PCRAM和Memristor,这项工作提出了具有持久主存储器的计算机架构的系统级延迟和能量影响。 我们的实验结果支持使用新兴的非易失性存储器技术作为持久主记忆的可行性,表明在使用PCRAM时,能量改善应显着,较少高达45.5%,当使用丢失时减少72.4%。

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