Influence of ammonia gas ambient in IPA drying process of the single wafer cleaning system

摘要

We performed experiments focused on the process chamber atmosphere in the IPA drying of the single wafer cleaning system and described the mechanism of defect formation. Defects are formed on wafer surfaces that are primarily composed of ammonia fluorides precipitated from water into IPA. It is interesting that an extremely small amount of NH_3 ion in the process chamber affects the formation of defects on a wafer surface. The results demonstrate the increasing importance of strictly controlling the atmosphere in the process chamber of the single wafer cleaning system for future device technologies.