首页> 外文会议>Conference on Ph. D. Research in Microelectronics and Electronics >Towards the use of functionality-enhanced devices: A transversal design approach
【24h】

Towards the use of functionality-enhanced devices: A transversal design approach

机译:符合功能增强设备的使用:横向设计方法

获取原文

摘要

Exploiting unconventional physical properties, several nanodevices showed an alternative to Moore's Law by the increase of their functionality rather than the pure scaling. Innovative device behaviors transduce to new circuit/architecture opportunities. Here, we focus on a novel class of computation devices that exhibit controllable-polarity property. At advanced technology nodes, Schottky contacts at channel interfaces are becoming challenging to avoid. Hence, devices face an ambipolar behavior, i.e., that the device exhibits n- and p-type characteristics simultaneously. Such a property is desirable for logic computation. Indeed, it has been recently demonstrated by EPFL that by constructing independent double-gate structures on Vertically stacked nanowires FETs (NWFETs), the device polarity can be electrostatically forced to be either n- or p-type. Controllable-polarity devices are logical bi-conditional on both gate values and enable a compact realization of XOR-based logic functions, which are not implementable in CMOS in a compact form. Hyper regular architectures and new EDA tools are then needed to leverage the intrinsic properties of controllable-polarity devices from an application perspective.
机译:利用非常规的物理性质,几个纳米纳米纳甸可以通过增加其功能而不是纯粹的缩放来替代摩尔定律。创新的设备行为转换到新的电路/架构机会。在这里,我们专注于具有可控极性性质的新型计算设备。在先进的技术节点,频道接口处的肖特基联系人正在避免挑战。因此,器件面对Ambipolar行为,即,该装置同时表现出n型和p型特性。这种特性是可用于逻辑计算的。实际上,最近通过EPFL证明了通过在垂直堆叠的纳米线FET(NWFET)上构建独立的双栅极结构,可以静电地静电地被静电地被静电为N-或P型。可控极性器件是栅极值上的逻辑双条件,并且能够紧凑地实现基于XOR的逻辑功能,其在紧凑的形式中不可实现在CMOS中。然后需要超常规架构和新的EDA工具来利用可控极性设备的内在特性从应用程序的角度来看。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号