A promising technology of Schottky diode based on 4H-SiC for high temperature application

摘要

A Schottky diode technology based on silicon carbide (SiC) with ramp oxide termination is presented. The improvement of the Schottky, respectively ohmic contact is conditioned by a rapid thermal processing to form Ni-silicide. The Schottky diodes (SD) have been electrical characterized in forward bias in range of temperature 300–573 K to verify their capacity to operate like temperature sensors. The results show an improvement of the electrical parameters with increasing of the temperature.