Modeling of radiation effects in MOSFETs

摘要

In this paper, the advances in the modeling of the radiation effects in MOSFETs will be briefly exposed. The change of the threshold voltage, mobility, subthreshold swing and the low frequency noise with the ionizing radiation will be shown and, if possible, modeled. Finally, the use of the MOSFET as dosimeter, mainly for clinical use, will be detailed, where our contribution in the readout techniques will be detailed in order to obtain a low-cost high performance dosimetric verification system.