Deep level defects on mono-like and polycrystalline silicon solar cells

摘要

Defects on mono-like and polycrystalline silicon solar cells are studied in depth. These defects are in the basis of the higher quantum efficiency of mono-like solar cells (~18%) with respect to polycrystalline ones (∼16%). Using the thermal admittance spectroscopy technique we found that both of them have a deep level due to a Fe-B complex. Furthermore, the deep level in the first one (224meV) is shallower than in the second one (345meV). Shallower deep levels degrade less the efficiency on solar cells, so this characteristic of the deep level in the mono-like solar cells leads to a better results in efficiency.