Schottky Barrier MOSFETs working in the linear regime: A Monte Carlo study of microscopic transport

摘要

This paper presents a detailed study (using a 2D Monte Carlo simulator) of the impact on electronic transport of dopant segregation layers in Schottky Barrier MOSFETs operating under the linear regime. It is shown that with a careful control of the layer parameters the performance of the devices are significantly improved, with a boosting of the drive current and an important reduction of the linear resistance (Rds(on)). The origin of these advantages can be related to internal microscopic transport quantities like transit time, distance travelled, scattering mechanisms, etc. The enhanced performance of Schottky Barrier MOSFETs including dopant segregation layers confirms the suitability of this technology to help extending the IRTS roadmap for Silicon MOS devices.