Simple selective electron beam patterning on a single nanowire

摘要

Newly developed techniques of selective electron beam patterning on a single nanowire are introduced without using the coordinate markers on the substrate or with the help of the optical microscopes. Coordinate-less patterning by image processing under scanning electron microscope was efficient to define electrodes patterns on the 100 nm scale nanowires. And a method using an optical microscope image made it possible not only to create fine electrodes of 10 nm order of nanowires but to reduce the working times and enable the process easier. A proper selective patterning of the electrode on a selected individual nanowire will be quite helpful for the fundamental researches as the bottom-up approach on the different length scale of nanowires.