How to form a partial single scan electron beam exposure mask and a partial single scan electron beam exposure pattern

摘要

A partial single scan exposure mask is provided to expose the photoresist formed over the active and isolation regions of the semiconductor device, by repeating the pattern, wherein the pattern boundaries of the photoresist are located only in the isolation regions. The patterns of the partial monoscan exposure mask may be for forming a wordline. In this case, the pattern boundaries of the partial single scan exposure mask may be formed in a direction perpendicular to the longitudinal direction of the word line. Alternatively, the pattern boundaries of the partial monomask exposure mask may be formed in a direction parallel to the active area. All of the contact hole forming regions may be included in the active region.