Generation of Si-O-C bond without Si-CH3 bond in hybrid type SiOC Film

摘要

The chemical shift of SiOC film was observed according to the flow rate ratio. SiOC film has the broad main band of 880t}1190 cm−1 and the sharp Si-CH3 bond at 1252 cm−1, and the infrared spectra in the Si-O-C bond moved to low frequency according to the increasing of an oxygen flow rate. The chemical shift affected the carbon content in the SiOC film, and the decreasing of carbon atoms elongated the C-H bonding length, relatively. The main bond without the sharp Si-CH3 bond at 1252 cm−1 consisted of Si-C, C-O and Si-O bonds, and became the bonding structure of the Si-O-C bond.