Study on Production and Current-Voltage Characteristics of ZnO Nano-thin Films Deposited by DC Magnetron Sputtering

摘要

We deposited ZnO thin films on single-crystal p-type Silicon <100> substrates by direct current (DC) magnetron sputtering method. The ZnO thin films deposited at room temperature by DC magnetron sputtering were annealed, when powers were 60, 90 and 120W, and temperature were 400, 500, 600 and 700°C respectively. Analyzed microstructure of the ZnO thin films by X-ray diffraction (XRD). Observed Cross-sectional view of the ZnO thin films by a Scanning Electron Micro-spectra (SEM), when power was 60W and thickness of the ZnO thin films were 90.31nm approximately. The experimental result shows, the ZnO thin films deposited at room temperature will represent higher preferential C-axis orientation along with increasing powers and annealed temperatures, I-V characteristics of the ZnO thin films at 60W display a nanometer effect.